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Extra resources for Advanced ceramic coatings and materials for extreme environments III : a collection of papers presented at the 37th International Conference in Advanced Ceramics and Composites, January 27-February 1, 2013, Daytona Beach, Florida
A 2 urn thick CdTe layer was then grown for 110 minutes at 425 °C. • Flipping rotation and conventional rotation deposited Mo films on amorphous substrates The Mo nanostructured samples were grown on native oxide covered Si(100) substrates of about 2 x 2 cm2 size by rotating the substrates dynamically in a DC magnetron sputtering system. 5 * 10"7 Torr. 3 mTorr, and the power was set to 200 W. 95% purity was a 3" round disk and the distance from the target surface to the center of the substrate was -15 cm.
DiCarlo, H. -M. Yun, G. N. Morscher, and R. T. , N. P. Bansal. Spinger, Berlin, 78-98, 2005. 6 M. C. Halbig, M. H. Jaskowiak, J. D. Kiser, and D. Zhu, "Evaluation of Ceramic Matrix Composite Technology for Aircraft Turbine Engine Applications", 51st AIAA Aerospace Sciences Meeting including the New Horizons Forum and Aerospace Exposition, AIAA 20130539, 2013. 7 E. J. Opila, J. L. Smialek, R. C. Robinson, D. S. Fox, and N. S. Jacobson, "SiC Recession Caused by SÍO2 Scale Volatility under Combustion Conditions: II, Thermodynamics and GaseousDiffusion Model," J.
The schematic in Fig. 8(b) mimic the high resolution TEM image in Fig. 8(a) and indicates that the Ge film is rotated by 180° with respect to the  direction of CaF2. Thus the Ge is a type B epitaxy layer. Figure 8. (a) High resolution TEM image of biaxial Ge and CaF2 films. The red dashed line represents an interface of Ge and CaF2. (b) A schematic representing the relative orientation between Ge and CaF2 films. From . First principles calculations using the density function theory has been performed to determine the energetics of the Ge(lll) on CaF2 interface.